Correction: Reliable high work-function molybdenum dioxide synthesis <i>via</i> template-effect-utilizing atomic layer deposition for next-generation electrode applications

Atomic Layer Deposition of Model Metal Oxide Electrode Architectures

A thorough knowledge of chemical and electrochemical processes that occur at the electrode interface is paramount to the development of improved materials for electrochemical energy storage. One approach is to study model systems with well-defined structures and geometries (architectures) more amenable to systematic and careful study of such materials. The goal of this work is to develop new ap...

Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...

Final Report FA2386-10-1-04063 High performance and highly reliable ZnO Thin Film Transistor fabricated by Atomic Layer Deposition for Next Generation Displays

Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition

Aluminum nitride (AlN) hollow nanofibers were synthesized via plasma-enhanced atomic layer deposition using sacrificial electrospun polymeric nanofiber templates having different average fiber diameters (~70, ~330, and ~740 nm). Depositions were carried out at 200°C using trimethylaluminum and ammonia precursors. AlN-coated nanofibers were calcined subsequently at 500°C for 2 h to remove the sa...

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications

Praseodymium aluminum oxide (PAO) thin films were grown by atomic layer deposition (ALD) from a new precursor, tris(N,N′-diisopropylacetamidinato) praseodymium, (Pr(amd)3), trimethylaluminum (TMA), and water. Smooth, amorphous films having varying compositions of the general formula PrxAl2–xO3 were deposited on HF-last silicon and analyzed for physical and electrical characteristics. The films ...